symbol v ds v gs i dm t j , t stg symbol ty p max 65 90 85 125 r jl 43 60 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics t a =70c 1 w power dissipation t a =25c p d 1.4 a t a =70c 4.9 pulsed drain current b 20 continuous drain current a t a =25c i d 5.8 drain-source voltage 30 v gate-source voltage 20 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units features v ds (v) = 30v i d = 5.8a (v gs = 10v) r ds(on) < 28m ? (v gs = 10v) r ds(on) < 43m ? (v gs = 4.5v) the AO3404 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device may be used as a load switch or in pwm applications. standard product AO3404 is pb-free (meets rohs & sony 259 specifications). AO3404l is a green product ordering option. AO3404 and AO3404l are electrically identical. g d s s g d to-236 (sot-23) top view n-channel enhancement mode field AO3404 effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 22.5 28 t j =125c 31.3 38 34.5 43 m ? g fs 10 14.5 s v sd 0.76 1 v i s 2.5 a c iss 680 820 pf c oss 102 pf c rss 77 pf r g 3 3.6 ? q g (10v) 13.88 17 nc q g (4.5v) 6.78 8.1 nc q gs 1.8 nc q gd 3.12 nc t d(on) 4.6 6.5 ns t r 3.8 5.7 ns t d(off) 20.9 30 ns t f 5 7.5 ns t rr 16.1 21 ns q rr 7.4 10 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =5.8a, di/dt=100a/ s i f =5.8a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =5.8a m ? v gs =4.5v, i d =5.0a v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =5.8a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance total gate charge turn-off fall time switching parameters total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =2.7 ? , r gen =3 ? v gs =10v, v ds =15v, i d =5.8a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 5 : july 2005 n-channel enhancement mode field AO3404 effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5 v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 125c 25c 25c i d =5a 5v 6 v n-channel enhancement mode field AO3404 effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0 2 4 6 8 10 02468101214 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =5.8a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 s n-channel enhancement mode field AO3404 effect transistor www.freescale.net.cn 4 / 4
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